Spin Coating Tech

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1.1. The device is suitable for preparing ohmic contacts for metal oxide semiconductors, Schottky diodes, heterostructure diodes, and solar cells.

1.2. The device should automatically set to the ohmic contact temperature.

1.3. The temperature range should be adjustable to all temperatures between 25°C and 1100°C.

1.4. The device should have a heating rate adjustment feature and should be adjustable to all values between at least 4-45 °C/min.

1.5. The ohmic contact should be prepared in a ceramic holder.

1.6. The oven should be able to prepare diodes with an ohmic contact resistance of 0.5 ohms.

1.7. The device should be able to prepare diodes with a rectification ratio of at least 1x10⁵.

1.8. The device should be able to prepare diodes with a series resistance of at least 100 ohms.

1.9. Temperature control should be provided by a PID controlled system.

1.10. 1.11. The ohmic contact temperature and ohmic contact duration must be entered from the device's screen.

1.12. The device must perform heat treatment using the tangent delta method.

1.13. The ohmic contact preparation chamber of the device must have a diameter of 60 mm and a depth of 135 mm.

1.14. The ohmic contact preparation part of the device must be cylindrical and have a rectangular base.

1.15. The device must be able to perform heat treatment automatically at least 30 different ohmic contact temperatures.

1.16. The internal heating part of the device must be round.

1.17. The outer diameter of the device cover must be 120 mm.

1.18. The subject of the device's ISO 9001-2015 certificate must be the production of devices used in scientific studies.

1.19. The device must have an industrial registration certificate.

1.20. The device must have a 2-year warranty.

1.21. Device delivery must be made within a maximum of 1 week.

1.22. Within 1 week after the device delivery, at least 3 people must be given at least 10 hours of training on device current and usage.